2026 HBCU CHIPS Network Conference

Apr 1, 2026, 8:00 AM → Apr 2, 2026, 6:40 PM America/New_York

Ball Room (Renaissance Atlanta Midtown Hotel)

George White (Chair Person) (Georgia Institute of Technology)

The 2026 HBCU CHIPS Network Conference will be held on April 1-2, 2026, at the Renaissance Atlanta Midtown Hotel in Atlanta, Georgia. This conference brings together students, faculty, researchers, industry professionals, and federal partners to advance innovation and workforce development in the U.S. semiconductor ecosystem. This annual conference was launched in 2025 and is now entering its second year, following the inaugural meeting hosted at Howard University on April 3–4, 2025.

Hosted by the HBCU CHIPS Network—a coalition of more than 30 Historically Black Colleges and Universities focused on cultivating a diverse and skilled workforce to support the U.S. semiconductor industry. The theme for the 2026 HBCU CHIPS Network Conference is Championing New Approaches to Reestablishing US Dominance in Semiconductors & Microelectronics. The Conference will focus on four technical areas: Materials & Devices, Advanced Packaging, Education & Workforce Development, and AI in Semiconductors. The conference will: 

• Showcase cutting-edge microelectronics and semiconductor research at HBCUs
• Explore collaboration opportunities between HBCUs and the semiconductor industry
• Highlight pathways for workforce development and research funding

Participants will engage in panel discussions, technical sessions and poster presentations that strengthen national capacity and expand diversity in the semiconductor workforce. This year, we will host our first-ever College Career Fair. Career Fair vendors will include major leaders in the semiconductor and microelectronics industry.

Students are encouraged to participate at the College Career Fair - March 31st, 2026. Students must register for the Career Fair, using the registration link, to attend.

All registrations and payments will take place in the GT Marketplace portal, known as the Georgia Tech Shopping Mall. 

Presentation Guidelines

Oral Presentations: Each oral presentation is allocated 15 minutes for the talk, followed by 5 minutes for questions and discussion. Presenters are kindly asked to adhere strictly to this timing to ensure a smooth program schedule.

Poster Presentations: Poster presenters are required to prepare posters with the following dimensions: 48 inches (width) × 36 inches (height).

Additional logistical details regarding poster setup and presentation schedules will be provided closer to the conference date.

Learn more about the Network and its initiatives at hbcuchips.org. For more information contact Taiesha Smith (taiesha.smith@gatech.edu).

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Industry_Day_Sponsorship.pdf

Sponsorship_Tiers.pdf

Wed, April 1

8:00 AM Registration

Registration + Breakfast

Morning Day 1: Welcome and Provost Remarks

Conveners: Welcome: Dr. Frances Williams, Vice President for Research and Sponsored Programs, Clark Atlanta University, Dr. George White, Executive Director, Strategic Partnership, Georgia Institute of Technology, Provosts: Dr. Charlene Gilbert, Provost and Senior Vice President for Academic Affairs, Clark Atlanta University, Dr. Raheem Beyah, Provost, Georgia Institute of Technology

Morning Day 1

Convener: George White (Executive Director, Strategic Partnerships, Georgia Institute of Technology)

1 Keynote Address + Micron Leadership Panel

Micron Technology

Speaker: Fran Dillard (Vice President Global Culture & Workforce at Micron Technology)

10:05 AM Coffee Break + Networking

Morning Day 1

Convener: Patricia Mead (Department Chair at Norfolk State University)

2 Microelectronics Industry Panel

Speakers: Armond Duncan (Sr. Program Manager at Micron Technology), Danielle Ferguson-Macklin (Talent Communities Program Manager at Teradyne), Robert Hoogland (Department Manager Embedded Software at ASML), Tara McCaughey (Strategic University Partnership Manager at GlobalFoundries)

11:20 AM Transition

Morning Day 1

Convener: TBD

3 Government Funding Opportunities

Speakers: Debbie Black-Conn (Microelectronics Commons WFD Lead, DEVCOM Army Research Laboratory), Dr James Moore III (Assistant Director, Directorate for STEM Education at National Science Foundation), Dr LaShauna Evans (Program Manager National Science Portal at Air Force Office of Science and Research), Michelle Williams-Vaden (Executive Director at SEMI Foundation)

Lunch + Microelectronics Award

Technical Session 1: Room A: Materials & Devices

4 Optics-Electronic Devices: Turn Light into Electricity Turn Electricity Into Light

The first paper about hybrid organic-inorganic solid state solar cells with perovskite-structured CH3NH3PbI3 as the active layer was published in 2009. Over 26% efficiency in few years, perovskite solar cells are the most promising next generation solar cell. It has been found application in light emitting, photoluminescence, sensors and so on. This presentation involves the synthesis and doping of halide perovskite materials for the application in solar cells, light emitting, electrochromism and other related topics.

Speaker: Prof. Qinglong Jiang (University of Arkansas at Pine Bluff)

5 Assessment of optoelectronic properties of an ambipolar polymer – photochromic dye blend in the solid state for organic photoresponsive device applications.

Research in polymer semiconductors drives the race to efficient flexible electronics, synaptic transistors and polymer solar cells. The current study investigated the fundamental optoelectronic properties of a donor – acceptor polymer blend, incorporated with a photochromic dye in the solid state, with the view to optimize the material’s parameters for organic photoresponsive device applications. It is a work in progress that is built on the premise that (i) a donor – acceptor blend might present a better charge transfer than a single polymer and (ii) a photochromic dye could potentially control charge transport via isomerization. A blend of Poly- 3-Hexylthiophene (P3HT), Poly naphthalene bithiophene (N2200) and Spiropyran dye was used as a case study, where a 1:1 weight ratio was maintained for all samples studied. Optoelectronic properties were extracted through UV – Vis spectral analysis and in the frames of Spitzer- Fan and Wemple-DiDomenico models. Results showed significant changes in properties such as bandgap and charge density of the blend compared to pristine P3HT and N2200 samples.

Speaker: Ikem Uba (Hampton University)

6 IR Photodetector based on the contactless-PdSe2 integration with Few-Layered MoSe2 Field-effect Transistor

Narrow-bandgap two-dimensional (2D) semiconductors are promising for near- and far-infrared photodetection, particularly at telecommunication wavelengths, but their performance is often limited by high dark current, carrier recombination, and thermal noise. Here, we report a hybrid van der Waals phototransistor that overcomes these challenges by integrating contact-free palladium diselenide (PdSe₂) as an infrared-absorbing layer with a molybdenum diselenide (MoSe₂) field-effect transistor (FET). Exfoliated PdSe₂ back-gated FETs exhibit ambipolar transport with hole and electron mobilities of 24.8 and 58.4 cm² V⁻¹ s⁻¹, respectively. Under 1650 nm illumination, PdSe₂ devices show clear photocurrent generation and a responsivity of ~300 mA W⁻¹ at a gate voltage of 15 V, confirming its suitability as a narrow-bandgap IR photodetector. To achieve tunable and enhanced photoresponse, few-layer PdSe₂ is transferred onto the channel of a MoSe₂ FET while remaining electrically isolated from the metal contacts. In this architecture, PdSe₂ acts as the primary IR absorber, whereas MoSe₂ provides efficient charge transport and gate control. The resulting spatial separation significantly improves device performance, yielding responsivities up to 972 mA W⁻¹ at a low power density of 1.5 mW mm⁻².

Speaker: Roshan Padhan (Jackson State University)

7 A Method for Calculating PIN Alpha-voltaic Cell Operational Life from Modelling and Simulation Data.

Nuclear batteries find applications in medical implants, sensor nodes, and are suited to deployment in extreme environments. Nuclear batteries made from alpha radiation sources offer the potential of higher energy density compared to beta-voltaic batteries. The mitigation of alpha particle damage to semiconductor charge collection structures remains a challenge, to extend the very short operational life of the alpha-voltaic battery. Degradation of carrier mobility in semiconductors occurs due to alpha irradiation induced deep defects, which reduce the carrier lifetime (τ). The degraded τ leads to the transducer failure, which reduces the operational life of the battery. In this study Isc, Voc and Pmax of the PIN type GaN alpha-voltaic cells were simulated using Silvaco Atlas, a TCAD software, for different lengths of the PIN transducers I-region from 0.2µm to 2µm, for τ from 1e-8 to 1e-15s. τ was employed as a surrogate for radiation defect density within the device. From plots of normalized Pmax of each device, the alpha particle fluence, semiconductor damage constant, and typical crystalline GaN τ, the operational life of the optimum device was computed.

Speaker: Kishak Cinfwat (Morgan State University)

Technical Session 1: Room B: Quantum Technologies

8 Building Quantum Information Science Capabilities at HBCUs: Insights and Recommendations

The IBM HBCU Quantum Center is at the forefront of revolutionizing education and research through a one-of-a-kind industry academic partnership. Here, we delve into strategies for building Quantum Information Science and Engineering (QISE) capabilities at HBCUs, drawing insights from initiatives such as the HBCU Quantum Center while considering the broader context of the CHIPS and National Quantum Initiative Renewal Acts. Our discussion encompasses the current status of QISE initiatives at HBCUs, including curriculum development, research capabilities, and faculty research output across physics, computer science, and engineering.
We also explore the interdisciplinary nature of quantum education and research, emphasizing collaborative efforts aimed at equipping students with the skills necessary for success in advanced computing technologies of the future. Additionally, we offer actionable recommendations for enhancing capacity-building efforts including curriculum enhancement, faculty recruitment and retention strategies, and fostering cross-institutional research collaboration.
In conclusion, this presentation provides a comprehensive overview of the ongoing efforts to build QISE capabilities at HBCUs, informed by specific initiatives in the HBCU Quantum Center and broader HBCU community. Through collaboration and strategic investment, we aim to further advance quantum education and research, ensuring that HBCUs play a pivotal role in shaping the future of quantum information science.

Speaker: Thomas Searles (University of Illinois at Chicago)

9 Implementation of Finite state logic machines via the dynamics of atomic systems

Following the success of Moore's predictions, we are approaching a limit in the miniaturization of semiconductors for computing materials. This has led to the exploration of various research paths in search of alternative computing paradigms, such as quantum computing, 3D transistors, molecular logic, and continuous logic. In this context, we propose a novel approach in which the dynamics of a two-level atom is used to execute classical Boolean logic operations. Unlike traditional combinational logic circuits, where the output depends solely on the input, we suggest a finite-state machine-like computing model, where the output is influenced by both the input and the system's initial state. The proposed mechanism leverages the dynamics of a two-level quantum state, with information encoded in observable quantities. These observables, the density matrix's population (diagonal) and coherence (off-diagonal) elements, were analyzed using the Liouville equation. The selection of observables within the Liouville space allows us to encode more variables. Although environmental noise may cause some loss of encoded information, fast computations can still be performed before it dissipates. In addition, logic operations can be read in parallel, enabling complex computations. This system can also be scaled to an N-level configuration.

Speaker: Dr Dawit Hailu (Bowie State University)

10 Optimization of Titanium Nitride as a Material for Superconducting Josephson Junctions in Quantum Computing Applications

The scalability of superconducting quantum computers remains fundamentally constrained by decoherence mechanisms in Josephson junction-based qubits, with two-level system (TLS) defects at material interfaces representing a primary source of energy dissipation. While aluminum has served as the conventional electrode material for superconducting qubits, its limitations in coherence times and susceptibility to surface oxidation have motivated the exploration of alternative superconductors. Titanium nitride (TiN) has emerged as a compelling candidate material, demonstrating superior resistance to oxidation, tunable kinetic inductance, and reduced TLS densities at critical interfaces. However, despite extensive application in superconducting resonators and capacitive elements, the systematic optimization of TiN-based Josephson junctions remains largely unexplored, representing a critical gap in quantum hardware
development.
This research investigates the comprehensive optimization of titanium nitride as an electrode material for superconducting Josephson junctions, addressing fundamental material science challenges that have impeded its widespread adoption. The study focuses on three interconnected objectives; establishing reproducible fabrication protocols for TiN thin films with controlled stoichiometry, crystallinity, and superconducting properties through systematic variation of
deposition parameters; engineering and characterizing barrier materials compatible with TiN
electrodes to achieve tunnel junctions with high critical current uniformity and low loss tangents;
and correlating material properties with quantum coherence metrics.

Speakers: Ebenezer Vondee (North Carolina A&T State University), Kiran Nyaupane (North Carolina Agricultural and Technical State University)

11 Investigation of Surface Acoustic Wave Dynamics at Cryogenic Temperatures for Quantum Device Applications

Surface acoustic waves (SAWs) offer potential for next-generation quantum technologies, including spin current generation, control of magnetization dynamics, and hybrid SAW–skyrmion platforms for qubit manipulation. Although SAW devices have long been used as RF filters, signal processors, and sensors, their operation in extreme environments remains underexplored. This work studies the frequency response of SAW devices at ultralow temperatures and under high magnetic fields, while also investigating hybrid coupling between SAWs and surface plasmon polaritons (SAW–SPP).
SAW devices are designed on 128° YX-cut lithium niobate, selected for its strong piezoelectric response and high electromechanical coupling. Devices use 50 finger pairs with 2 µm width and a 8 µm wavelength in the HF range, and a 300 µm aperture for improved acoustic confinement. Equivalent circuit models including IDT capacitance, motional branches, acoustic delay, and matching networks are implemented in Mathcad and LTSpice, with COMSOL Multiphysics simulations used for validation.
Cryogenic analysis shows reduced phonon scattering modifies velocity, attenuation, and coupling, shifting resonance and increasing Q. High magnetic fields and integrated metal–dielectric interfaces enable study of magneto-acoustic effects and SAW–SPP interactions, establishing a multiphysics framework linking RF, acoustic, cryogenic, and plasmonic behavior for compact, high-Q, field-tunable quantum and sensing platforms.

Speaker: Felix Kimeu (Norfolk State University)

Technical Session 1: Room C: Materials & Devices (Undergraduate Session)

12 Urea-based GQDs with PVA Integration

Graphene Quantum Dots (GQDs) have emerged as a highly promising class of nanomaterials due to their strong photoluminescence, chemical tunability, and favorable electrochemical properties. In this study, urea-derived GQDs and poly(vinyl alcohol) (PVA)–GQD composites were synthesized through a two step process aimed at enhancing both their optical performance and structural characteristics. First, GQDs were produced using a bottom up synthesis approach to generate uniform nanoscale particles exhibiting stable blue green emission. Subsequently, these GQDs were incorporated into a PVA matrix to form PVA–GQD composites with improved photoluminescent behavior.
The optical properties of the synthesized materials were characterized through UV–Vis absorption and photoluminescence spectroscopy. Additional characterization was conducted using Dynamic Light Scattering (DLS) and zeta potential analysis to evaluate particle size distribution and colloidal stability. Building on these findings, the next phase of the study will involve electrochemical assessment via cyclic voltammetry and electrical impedance spectroscopy. These measurements are expected to provide deeper insight into material quality and guide the identification of optimal applications. Based on preliminary results, we anticipate strong potential for electrochemical applications, with additional utility in optical systems owing to the material’s robust photoluminescence.

Speaker: Aldine Willacey (University of Arkansas at Pine Bluff)

13 Luminescence from Nanoscale Perovskite Semiconductor Materials

Semiconductors exhibit distinctive electronic behavior governed by transitions across narrow bandgaps, typically 0 to a few electron volts. Upon optical or electrical excitation, electrons are promoted to the conduction band, leaving holes in the valence band. Luminescence is produced when these electron–hole pairs recombine radiatively, emitting photons. Because emission efficiency depends strongly on radiative pathways, defect states, and electron–phonon interactions, semiconductors remain central to luminescence technologies, including light-emitting diodes (LEDs), which are valued for their high energy efficiency, long operating lifetimes, and strong brightness. In this work, we investigate Mn-doped vacancy-ordered hexagonal perovskites as promising phosphor candidates for solid-state lighting. The materials were synthesized using a facile solution-based method and characterized by X-ray diffraction and electron microscopy to confirm phase formation and assess crystal structure and morphology. Mn incorporation was systematically optimized using photoluminescence measurements to tune emission features and improve quantum efficiency. Additional spectroscopic studies were carried out to probe energy-transfer pathways, defect-related relaxation processes, and thermal stability, properties that ultimately determine performance under practical device conditions. Finally, the synthesized phosphors were incorporated into phosphor-converted LED prototypes, demonstrating their potential as efficient and stable emitters for next-generation solid-state lighting.

Speaker: Mr Thomas Murray (Fayetteville State University)

14 Fabrication and Characterization of the Thin Film Solid State Li-Ion Batteries

Solid-state lithium-ion batteries are recognized as the emerging battery technology of choice for electronics that store electrical energy, providing greater safety and compactness compared to standard lithium-ion batteries. The latter contains a liquid electrolyte, which leads to more leakages and other dangers. The advantages provide benefits to the emerging battery technology. The chances of leakage are reduced and there is less risk of burning.
We focused on a strong fabrication and measurement process for the materials for a thin-film solid-state lithium-ion battery. The battery materials used were LiCoO₂ as the cathode, LiPON as the solid electrolyte, Sn as the anode, and a stack of these materials as a single entity in a film format placed on silicon substrates utilizing electron-beam evaporation. The films were also annealed at 50°C, 100°C, and 150°C for one hour each with an unannealed set used as reference to analyze the effects of annealing.
To evaluate how annealing affected battery behavior, we used a Van der Pauw measurement system analyzing electrical parameters: resistivity, sheet resistance, mobility, carrier density, and Hall coefficient. These measurements were complemented by current–voltage (I–V) characterization for each material and the multilayer stack. Findings will be presented during the meeting.

Speaker: Jamar Dozier (Alabama A&M University)

15 Design, Fabrication, and Characterization of Thermoelectric Devices from Multilayer Thin Films

Design, Fabrication, and Characterization of Thermoelectric Devices from Multilayer Thin Films

Essence Carter, Cole Cooper, Kristen Harris, Zaria Weeks, Satilmis Budak and Zhigang Xiao

Alabama A&M University, Department of Electrical Engineering and Computer Science, Huntsville, AL USA

Abstract:
The objective of this project is to use nano-engineering and nanofabrication to develop nanostructured thermoelectric materials for application in high-efficiency thermoelectric power generators and solid-state micro cooling devices. Multi-nano-layered super-lattice thin films of Bi2Te3/Sb2Te3 were grown using ultra-high vacuum-based deposition methods for achieving a high thermoelectric figure of merit, ZT. To significantly increase the ZT value, the values of the Seebeck coefficient and electrical conductivity should increase while the thermal conductivity should decrease for the efficient thermoelectric generators and thermoelectric coolers.
Bi2Te3/Sb2Te3 multilayer thermoelectric devices were fabricated and these samples addition to the previous single layers of Bi2Te3 and Sb2Te3 samples were characterized. The planned characterization techniques listed as: Seebeck Coefficient, Thermal Conductivity, four probe Hall effect measurements, SEM/EDS, XPS/Raman, I-V Characterizations, Impedance Measurements. After the characterizations are performed, the nanofabrication of the thermoelectric devices will be performed using the best recipe for the high efficient thermoelectric devices. The findings will be shared during the conference.

Speaker: Cole Cooper (Alabama A&M University)

2:30 PM Break + Transition

Technical Session 2: Room A: Materials & Devices

16 Using Q-Switched Lasers for Multi-Beam Multi-Target Pulsed Laser Deposition of Photonic High-Entropy Alloy Films

Presentation describes the application of Q-switched lasers to the concurrent multi-beam multi-target pulsed laser deposition (CMBMT-PLD) of the high-entropy alloy (HEA) films. A six-beam system included permanent magnets under the PLD targets and the substrate and a substrate heater. Magnets narrowed down the plasma plumes from the targets and increased the material deposition rate. Three- (Au-Ag-Cu), four- (Au-Ag-Cu-Al), five- (Au-Ag-Cu-Al-Ti), and six-metal (Au-Ag-Cu-Al-Ti-W) films were deposited on Cu, Al, Fe, and Ni substrates. Scanning electron microscopy and X-ray analysis indicated the films were the aggregates of crystalline nanoparticles (NPs) of mostly individual metals and double-metal alloys. Heating the substrates up to 300°C resulted in the formation of a wider variety of double-alloy nanoparticles due to higher mobility and reactivity of the deposited atomic species. The HEA films amplified the photoluminescence (PL) of the perovskite CsPbBr3 quantum dots (QDs) deposited on the top by 6 to 16 times. This was because of two simultaneous effects:the enhancement of the incident ultraviolet radiation (372-nm wavelength laser) by the localized surface plasmon polariton resonance in the metal NPs surrounding the perovskite QD, and the fast decay of the excited state of the QD due to resonant coupling between the QD and near vicinity NPs.

Speaker: David Rossmanith (Dillard University)

17 Van der Waals Integration of Semi-Metallic PdSe2 Contacts for High-Performance n-type WS2 Field Effect Transistors

Two-dimensional transition metal dichalcogenides (TMDs) show immense potential for next-generation nanoelectronics and optoelectronics, owing to their atomic-scale thickness and compatibility with van der Waals (vdW) integration. Consequently, TMDs have become central to emerging technologies such as neuromorphic computing, high-speed photodetectors, and superconducting quantum circuits. However, a critical bottleneck remains the high contact resistance at the metal-semiconductor interface, often caused by Fermi level pinning and substantial Schottky barrier heights. This interface degradation leads to severe resistive power loss and limits device scalability. To address this, we investigate the efficacy of few-layer, semi-metallic palladium di-selenide (PdSe2) as a van der Waals contact interlayer. We fabricated field effect transistors (FETs) utilizing n-type tungsten disulfide (WS2) as the semiconducting channel and PdSe2 as the source/drain terminals. We evaluated performance metrics, including carrier mobility and contact resistance, using the transfer length method across varying channel lengths. Temperature-dependent transport measurements were performed to determine the Schottky barrier height. Preliminary results indicate that PdSe2 contacts significantly improve carrier injection compared to traditional metals. The improved performance is attributed to the favorable band alignment between the semi-metallic PdSe2 and n-type WS2. This work highlights the promise of PdSe2 as a scalable, low-resistance contact material for high-performance 2D electronics.

Speaker: Saurabh Dixit (Jackson State University)

18 Dielectric Properties of Conducting Boron-Doped Diamond

We extract the infrared dielectric function from Fourier transform infrared reflectance spectra 650−4000 cm−1 for conducting single crystal and polycrystalline boron-doped (3−6×1020 cm−3) diamond (BDD) by Kramers–Kronig (K–K) analysis, validating our method on commercial SiC substrates. This method highlights the importance of using integrable functions in K–K, solving issues with convergence near the endpoints of the measurement spectral range. Polycrystalline BDD shows an elevated optical index ∼3−3.5 below 2000 cm−1 compared to the ∼2.5−2.7 in single-crystal BDD, and the ∼2.4 for ideal diamond, accompanied by increased dielectric loss at ∼1250 cm−1, termed the L2-mode. Raman mapping of this IR-active ωL2 revealed elevated levels of graphitic sp2 inclusions, particularly at grain boundaries. These optical measurements are consistent with polycrystalline BDD showing lower electrical resistivity 0.05Ω-cm, one order lower than that of the single crystal 0.6Ω-cm, highlighting the strong role of sp2 inclusions in grain boundary conductivity as a source of dielectric loss. These results show that extrinsic factors beyond B-doping alone should be considered in the interpretation of the optoelectronic properties of BDD and inform its use for thermal management in codesigned microelectronics for power and RF systems, plasma-assisted epitaxy of cubic boron nitride and electrochemistry.

Speaker: Daniel Harrison (Morgan State University)

19 Growth of Cubic Boron Nitride by Electron Cyclotron Resonance Chemical Vapor Deposition on Boron Doped Diamond Substrates

Cubic boron nitride (c-BN) is an ultrawide-bandgap semiconductor with a 6.4 eV bandgap, a high breakdown field above 15 MV/cm, and great thermal conductivity of 940 W/m·K. This makes it excellent for the next generation high-power and high-temperature electronic devices. In this work, we report the growth of c-BN using a custom-built Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) reactor. Energy-dispersive spectroscopy (EDS) revealed a B/N ratio of approximately 1:1, consistent with that of reference bulk c-BN crystals, confirming the presence of boron nitride. Fourier Transform Infrared (FTIR) measurements represent clear features corresponding to the reststrahlen band of cBN, with initial evidence of the responsible phonons at 1050cm-1and 1305cm-1 through Raman spectroscopy. Some samples show a mixture of c-BN and h-BN, while most are single-phase c-BN. Capacitance measurements indicated a film thickness of 0.1–0.3 µm, consistent with the results obtained from atomic force microscopy (AFM). Boron Doped Diamond Substrate is ideal for c-BN growth, but its strong Raman signals hinder BN phase analysis, underscoring the need for Cathodoluminescence (CL) mapping. CL imaging distinctly resolved h-BN and c-BN grains of around 20 µm, identified by their characteristic sub-bandgap emissions near 330 nm and 470 nm, respectively.

Speaker: Mr Sheikh Mahtab (Graduate research assistant)

Technical Session 2: Room B: AI in Semiconductors

20 A Lab-to-Go Approach for AI and Semiconductor Education

The rapid adoption of artificial intelligence in semiconductor systems has exposed a persistent gap in engineering education: students often learn AI using high-level software platforms without understanding how underlying silicon realities shape performance, efficiency, and reliability. This disconnect, referred to as the Cleanroom Barrier, separates algorithmic learning from hardware constraints such as power consumption, thermal behavior, and physical variability, limiting students’ ability to reason across the full AI–hardware stack. This work proposes a portable Lab-to-Go educational approach that enables experiential learning at the intersection of machine learning and semiconductors, without reliance on traditional cleanroom facilities or large-scale infrastructure. By emphasizing hands-on interaction with real hardware and observable system behavior, the approach reinforces the connection between AI models and the physical platforms on which they execute. The proposed direction supports workforce development needs in the CHIPS era by promoting systems-level thinking and preparing students to design, evaluate, and deploy AI solutions with an awareness of semiconductor constraints.

Speaker: Xuemin Chen (Texas Southern University)

21 Diamond Quantum Vector Magnetometer Optimization with Machine Learning Models

Defects in semiconductors and diamond are emerging as highly efficient platforms for quantum sensing applications. Machine learning offers a powerful alternative to conventional model-based data analysis in quantum sensing, particularly for computationally intensive techniques such as continuous-wave optically detected magnetic resonance (CW-ODMR) using nitrogen-vacancy (NV) centers in diamond. Traditional extraction of magnetic field information relies on nonlinear spectral fitting, which becomes a major bottleneck for high-throughput and real-time applications. In this study, we present a machine learning–based framework for full-vector magnetic field reconstruction directly from raw CW-ODMR spectra acquired from NV-diamond ensembles. By combining fast photodiode-based ODMR detection with data-driven regression models, the proposed approach preserves the intrinsic spectral resolution of NV spin resonances while eliminating the need for iterative fitting procedures. The models are trained on datasets incorporating realistic noise, strain effects, temperature variations, and contrast fluctuations, enabling direct prediction of three-dimensional magnetic field components from single-shot spectra. This framework significantly reduces computational latency while maintaining high magnetic field sensitivity, making it well suited for real-time vector magnetometry and scalable quantum sensing platforms. Overall, our results highlight the potential of machine learning to enhance the speed, robustness, and accessibility of NV-based magnetic field sensing technologies.

Speaker: Hamdin Ozden (Morgan State University)

22 Design of a High-Performance 1024-bit Arithmetic Logic Unit for Cryptographic Acceleration

The project is conducted as a collaborative effort involving undergraduate engineering and physics students, with the dual objectives of achieving a tapeout-ready design and providing hands-on training in modern VLSI workflows. The ALU architecture is optimized for wide-word arithmetic commonly required in public-key cryptography, including modular addition, subtraction, and logic operations.

The design process is organized into several stages: architectural specification and operation selection; register-transfer level (RTL) development and functional verification; pipelined micro-architecture design; synthesis, placement, and routing; and timing, power, and area optimization. A deeply pipelined, systolic approach is employed to overlap input loading, computation, and output generation, enabling high throughput despite the large operand width. The implementation targets the GlobalFoundries 180 nm CMOS (180MCU) technology, with the end goal of participating in an academic tapeout.

Significant challenges were encountered, including the steep learning curve associated with commercial Synopsys design tools, limited or fragmented documentation, and routing congestion arising from the extreme datapath width. These challenges motivated a parallel evaluation of open-source VLSI design flows. Preliminary results indicate that open-source toolchains, such as LibreLane, provide a viable and pedagogically effective alternative for early-stage prototyping and education, while maintaining compatibility with industry-standard design practices.

Speaker: Daniel Vrinceanu (Texas Southern University)

23 Maximizing HBCU University Websites to Highlight Contributions to AI‑Enabled Semiconductors: Research, Workforce Development, Academic Programs, and Institutional Initiatives

As the U.S. advances efforts to strengthen its semiconductor and microelectronics workforce, institutional websites have become a primary source of information for students, researchers, industry partners, and federal funders seeking to identify research capacity, workforce initiatives, and collaboration opportunities. These stakeholders, particularly students exploring workforce pathways and funders assessing institutional readiness, public-facing web content serves as the first point of engagement and a critical signal of institutional priorities.

Historically Black Colleges and Universities (HBCUs) play a vital role in diversifying and sustaining the national semiconductor workforce, yet their contributions to AI-enabled semiconductor research and workforce development remain under-documented in broader research literature. Rather than cataloging academic offerings, this study addresses this need by examining the following research question: How are Historically Black Colleges and Universities contributing to AI-enabled semiconductor workforce development through research and institutional initiatives?

Our findings will be the first data-driven mapping of visible HBCU engagement in AI-enabled semiconductor workforce development, which highlights areas of strength and structural gaps in institutional signalling, while underscoring the strategic importance of web visibility. Collectively, this work positions HBCUs as essential contributors to the AI-enabled semiconductor workforce while offering actionable insights for institutions and policymakers seeking to strengthen inclusive workforce ecosystems.

Speaker: Myah Webb (University of Arkansas at Pine Bluff)

Technical Session 2: Room C: Education and Workforce Development

24 Bridging the Talent Gap: A New Approach to Accelerating Workforce Solutions for Semiconductors

The semiconductor industry cannot scale without people. In this keynote, Michelle Williams, Executive Director of the SEMI Foundation, shares how the SEMI Foundation is transforming lives and strengthening communities through bold new initiatives coupled with tried-and-true programs. From sparking industry curiosity in K–12 classrooms, to helping veterans launch new careers, to launching and leading the National Network for Microelectronics Education, the SEMI Foundation is expanding career pathways for people around the globe. Learn how you can join these efforts to build a innovative, skilled, industry-ready workforce that will power the future of semiconductors.

Speaker: Michelle Williams-Vaden (SEMI Foundation)

25 Collaborative Research: Advancing Semiconductor Education through Expansion and Diversification (ASEED)

The Chips & Science Act, while focused on strengthening U.S. semiconductor manufacturing, also creates critical opportunities for workforce development. However, chip design and manufacturing demand advanced facilities and interdisciplinary STEM expertise, posing significant challenges for small institutions. These challenges include limited access to training resources, difficulty sustaining expensive infrastructure, and constraints in assessing community impact.
In response, Prairie View A&M University, Central State University, and Alabama A&M University launched the NSF-funded ASEED project under the INCLUDES program to develop shared solutions and raise national awareness of these systemic challenges. The ASEED leadership also serves as lead investigators on major industry-supported initiatives, including Apple NSI and Intel-SERP, establishing a strong, multi-state foundation for semiconductor education and research.
Building on this foundation, ASEED seeks to expand collaboration among small institutions and strengthen infrastructure across the full chip design pipeline. The project emphasizes broad access and industry-relevant skill development through integrated research and educational thrusts in materials science, IC design, and fabrication and characterization. ASEED also delivers diverse training pathways: seminars, workshops, certificates, and graduate credentials while engaging community colleges and high schools. The project aims to share its outcomes broadly to foster feedback, partnership, and scalable impact nationwide.

Speaker: Suxia Cui (Prairie View A&M University)

26 Development of a Multiuser Collaborative Virtual Training Environment for Photolithography Cleanroom Processes

The semiconductor industry relies heavily on photolithography processes conducted in controlled cleanroom environments, where training and collaboration are constrained by stringent contamination protocols, high operational costs, and physical limitations. To address these challenges, we present a novel immersive Collaborative Virtual Training Environment (CVTE) designed for multiuser interaction and collaboration. This system enables participants to engage in shared simulations of cleanroom workflows, fostering real-time teamwork without the risks associated with physical cleanrooms. Key features include synchronized multiuser avatars for interpersonal communication, controller-based interactions for manipulating virtual photolithography equipment (e.g., wafer handling, mask alignment, and exposure simulation), and environmental fidelity. Python scripting facilitates dynamic scenario customization, real-time physics simulations, and the integration of collaborative tools such as shared annotations and voice chat. Preliminary evaluations demonstrate low-latency synchronization across networked head-mounted displays (HMDs), achieving response times under 50ms for interactions, and high user immersion scores via standardized VR questionnaires. Our VTE represents a scalable solution for industrial training on semiconductor device fabrication, with potential extensions to other high-stakes manufacturing domains. Future work will incorporate haptic feedback and AI-driven adaptive scenarios to further elevate collaborative efficacy.

Speaker: Emmanuel Osei-Kwame (Norfolk State University)

27 On the Feasibility of Solving the Time Independent Schrödinger Equation using Neural Network and Block Form with Rayleigh Quotient Loss Function

In the HBCU Chips 2025 conference, M.R. Hadizadeh, B. Sarker, and M.A. Khan presented an approach for solving 1D quantum systems using machine learning. Here, we present a discussion and feasibility consideration of numerical methods for computing multiple eigenpairs of Hamiltonian matrix $A\in\mathbb{R}^{n\times n}$ using a block formulation of the Rayleigh quotient in either Python or Julia in a closely related problem. This approach reformulates the classical eigenvalue problem $A\mathbf{v}=\lambda\mathbf{v}$ into a block structured optimization framework. This block formulation may enable simultaneous computation of multiple eigenpairs and provide enhanced numerical stability through the use of structured matrix operations. The method will attempt to leverage the geometric properties of the Rayleigh quotient in block space, where the gradient and Hessian structure are exploited for efficient optimization. The proposed technique discussed may combine elements of the Rayleigh quotient iteration with possible block Krylov subspace methods, towards achieving convergence rates compared to traditional power iteration approaches for small blocks. The algorithm's computational complexity is considered and may scale favorably with problem dimensions, particularly for computing the $k$ smallest eigenpairs. Numerical experiments will be discussed.

Speaker: Prof. T.L. Wallace (Meharry Medical College)

Poster Session

Reception

Thu, April 2

8:30 AM Registration + Breakfast

Morning 2: State of the HBCU CHIPS Network

Convener: George White (Georgia Institute of Technology)

28 Conference Technical Committee Co-chairs

Speakers: Daniel Vrinceanu (Texas Southern University), Prof. Mohammadreza Hadizadeh (Central State University)

29 HBCU CHIPS Network Initiating Commitee

Morning 2

Convener: Erin Lynch (President of Quality Education for Minorities (QEM) Network)

30 Fireside Chat with CEO

Speaker: Greg Smith (CEO of Teradyne)

10:20 AM Coffee Break

Morning 2

Convener: Kevin Kornegay (Eugene Deloatch Endowed Professor at Morgan State University)

31 Role of AI in Semiconductors and Microelectronics Panel

Speakers: Dina Tandabany (Professor of Chemistry at Clark Atlanta University), Dr Jeremy Muldavin (Director Sales Development A&D at Cadence), Konstantin Cvetanov (Global AI Factory Tech Lead at Nvidia), Li Song (Memory CAD Engineering & AI/ML at Micron Technology), Ron Duncan (Head of Corporate Innovation Programs at Synopsys)

Lunch Day 2

Technical Session 3: Room A: Materials & Devices

Technical Session 3

32 Interface-Engineered van der Waals Heterostructures for Next-Generation Microelectronic Contacts

The continued scaling of microelectronic devices is fundamentally constrained by non-ideal metal–semiconductor interfaces, where Fermi-level pinning and metal-induced gap states limit Schottky barrier tunability and increase contact resistance. This work proposes an integrated research and workforce framework to advance next-generation contact engineering through atomically controlled van der Waals heterostructures and critical materials innovation. Central to this effort is the development of tunable interfaces that restore near-ideal transport behavior by suppressing interfacial disorder and enabling predictable band alignment.

Leveraging expertise in carbon-based semiconducting materials, nanoscale spectroscopy, and multifunctional nanomaterials, the project explores molecular–2D hybrid architectures capable of improving charge injection efficiency, reducing barrier variability, and supporting thermionic-field emission mechanisms critical for high-performance nanoelectronic and optoelectronic devices. Density-functional-theory-guided design and advanced structural characterization will be used to correlate interfacial chemistry with carrier transport, providing pathways toward low-resistance, thermally stable contacts compatible with future microelectronic manufacturing.

Beyond device innovation, this initiative integrates workforce development to prepare a technically skilled pipeline aligned with the growing semiconductor and microelectronics sectors. By combining interface engineering, predictive materials design, and scalable training models, the program positions Hampton University as a strategic contributor to domestic microelectronics capability, supporting technological competitiveness and national supply-chain resilience.

Speaker: Mohamed Noufal (Hampton University)

33 Growth of Scandium Diboride Semimetallic Single Crystals by Laser Floating Zone Method

Scandium diboride (ScB2) is a refractory semi-metallic ultrahard ceramic crystal that is lattice matched to ultra-wide bandgap (UWBG) AlGaN. The lattice match of ScB2/Al0.55Ga0.45N would reduce the strain and crystal defects of epitaxial layers enabling thicker pseudomorphic drift layers >5um for high voltage vertical power devices >5kV on these semi-metallic substrates, while eliminating the substrate series resistance parasitic.
We demonstrate the growth of ScB2 crystals by the laser-diode floating zone (LDFZ) method. Poly-crystalline ScB2 rods were used as our feed and seed rods, and Sc as flux, with a starting resistivity of ~400μΩcm. Our growth rate is ~2mm/hr giving a typical total growth of >20mm long. X-Ray Diffraction (XRD) data shows clear signatures of (001) ScB2. Laue measurements on cut/polished samples show six-fold symmetry over mm length scales, with room temperature bulk resistivity ~20μΩ-cm, ~20x lower than the starting feed material. Heat-capacity measurements were performed at temperatures 2K<T<300 K and were analyzed to quantify the contributions of phonons and electrons. The Debye temperature (θD~710K) and the electronic coefficient (γ ~ 3.8 mj.mol^(-1).K^(-2)) of heat capacity Determined. These samples had thermal conductivity ~100 W/m-K at the level of Si and GaN, showing the potential for substrates from an electrothermal co-design perspective.

Speaker: Ahamed Raihan (Morgan State University)

34 Abstract: Broadband Surface Acoustic Wave Generation via Chirped IDTs for Programmable Spin Control

Controlling spin states in quantum and magnetic materials using dynamic strain fields offers a promising route toward hybrid quantum and spintronic technologies. Surface acoustic waves (SAWs) provide a versatile mechanism for generating such strain via magnetoelastic or piezomagnetic coupling. However, conventional interdigital transducers (IDTs) are limited by narrow frequency bands. This narrow bandwidth limits the ability to address spin transitions across a range of energy scales to compensate for inhomogeneous broadening.

This work focuses on designing and implementing chirped IDTs to generate broadband SAWs for tunable multi-frequency spin control. We first developed a predictive frequency-domain model of the chirped geometry on Mathcad, a computational software.

To bridge the gap between theory and application, devices are fabricated on a 1280 YX cut lithium niobate substrate using the Nanyte Beam maskless lithography tool. We use the liftoff technique to create the device patterns. This approach bypasses the need for physical photomasks, enabling rapid prototyping of complex, customizable chirp profiles and varying electrode densities. Experimental RF characterization, performed via S-parameter measurements using the Tektronix RSA518A spectrum analyzer, confirms successful broadband operation. The results show strong agreement with our modeled spectra, validating the design’s efficiency.

Speaker: Andre Saffore II (Norfolk State University)

35 Engineering Semiconductor Thin Films with ALD and Integrated Metrology

The CHIPS and Science Act has accelerated the need for domestic semiconductor manufacturing capabilities built on precise thin-film deposition, scalable process control, and integrated metrology. Atomic Layer Deposition (ALD), with its angstrom-level thickness control and excellent conformality, is a critical enabler for next-generation logic, memory, and interconnect technologies.
This work presents a process-engineering and metrology-driven approach to metal and metal-oxide thin films developed through extensive hands-on experience with ALD and complementary vacuum deposition techniques. Rather than focusing on materials discovery, the emphasis is on establishing repeatable, manufacturing-relevant thin-film processes. Films are characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM), Raman spectroscopy, and spectroscopic ellipsometry to correlate deposition conditions with thickness, crystallinity, surface chemistry, and morphology.
By integrating multi-modal metrology with deposition process development, this work enables rapid feedback for recipe optimization, improved film uniformity, and enhanced integration readiness. Select electrochemical evaluations are used as secondary performance validation of film quality and stability. Overall, this approach demonstrates how ALD process engineering combined with comprehensive metrology directly supports CHIPS Act priorities by advancing scalable manufacturing workflows and strengthening the semiconductor workforce pipeline.

Speaker: Swapnil Nalawade (North Carolina A & T State University)

Technical Session 3: Room B: Power Electronics

Technical Session 3

36 Titanium Oxynitride Thin Film and Nanowires for Ultrahigh Capacitance Supercapacitors

High-quality, multifunctional two-dimensional (2D) titanium oxynitride (TiNO) thin films and one-dimensional (1D) TiNO nanowires have been synthesized using a pulsed laser deposition, a simple, fast, and congruent evaporation method. First-principles calculations as a function of surface orientation and termination indicate that surface oxidation of TiNO nanowires can stabilize the (110) orientation observed experimentally. The specific capacitance value for the TiNO nanowire samples (2725 mF/cm2) has been found to be nearly six times more than that of the TiNO thin film samples (400 mF/cm2), which is attributed to the high packing density of TiNO nanowires over a given area. The nanowire samples have also been found to exhibit a significantly higher energy density (1.35 μWh/cm2) than the TiNO thin-film samples (0.33 μWh/cm2). Thus, the TiNO material system in thin-film and nanowire forms has been demonstrated to be a promising candidate for use as an electrode material in supercapacitors and other charge-storage applications.

Speaker: Sheilah Cherono (North Carolina Agricultural and Technical State University,)

37 Modeling the Effects of Surface Potential on Gallium Nitride Betavoltaic Cell Collection Efficiency

The performance of Gallium Nitride (GaN) betavoltaic devices is strongly influenced by surface potential due to the shallow penetration depth of beta particles from Tritium (³H). In this work, the effects of surface potential on charge collection efficiency in a PN, GaN betavoltaic cell are modeled using a Metal–Oxide–Semiconductor (MOS)-based field-plate approach implemented in Silvaco TCAD. The model incorporates incomplete dopant ionization and surface recombination to realistically capture carrier transport near the surface. By varying the surface potential and P-type doping concentration, the impact of surface-induced depletion on carrier collection is quantified. Simulation results indicate that at a surface potential of 1.5 eV, a P-type doping concentration of 1×10¹⁹/cm³ enables approximately 87% of the ideal (flat-band) collection efficiency, whereas a lower doping concentration of 1×10¹⁸/cm³ results in only 57% of the maximum achievable efficiency due to complete depletion of the P-layer. These findings demonstrate that surface potential is an unavoidable effect in GaN betavoltaic devices and that high P-type doping combined with ultra-thin junction design is essential for mitigating surface-induced carrier loss. The results provide design guidelines for optimizing shallow-junction GaN betavoltaic cells for long-lifetime, ultra-low-power nuclear energy harvesting applications.

Speaker: Monté Hendrix (Morgan State University)

38 Multi-layered Porous PVDF 2D Heterostructure Nanofillers as High-Density Capacitive Energy Storage

The increasing demand for high-performance energy storage devices has intensified interest in dielectric polymers for electrostatic capacitive applications due to their high-power density and compatibility with thin-film architectures. Among these materials, poly(vinylidene fluoride) (PVDF) is particularly attractive because of its high dielectric constant, low cost, mechanical flexibility, and biocompatibility. The piezoelectric response of PVDF originates from its electroactive β-phase; however, its output performance remains inherently limited. Recent studies have demonstrated that introducing controlled porosity into polymer thin films can substantially enhance their dielectric and piezoelectric properties.
In this work, we systematically investigate the dielectric behavior, electric polarization, and energy density of PVDF, Porous PVDF, PVDF/MoO₃ nanocomposite capacitors. Exfoliated two-dimensional MoO₃ nanofillers are incorporated as interfacial layers within multilayer PVDF thin films, forming capacitor heterostructures with configurations of PVDF/MoO₃/PVDF (PMP) and Po-PVDF/MoO₃/Po-PVDF (Po-PMP). Porous PVDF films are fabricated via nonsolvent induced phase separation(NIPS), producing polymer-rich and polymer-poor domains that yield a well-defined porous morphology. The synergistic effects of porosity and interfacial MoO₃ nanolayers lead to enhanced dielectric polarization and improved energy storage performance, highlighting the potential of porous PVDF-based heterostructures for advanced capacitive energy storage applications.

Speaker: William Gladney (Jackson State University)

39 SLA-Printed Architected Polymer Thermal Interface Materials with BN/Microfiber Fillers for High-Power Semiconductor Cooling

Power semiconductor devices generate substantial heat during operation, making thermal interface materials (TIMs) critical for maintaining performance and reliability. Conventional greases and pads, however, often suffer from poor mechanical stability, limited reusability, and inconsistent application. Here we present a scalable approach to fabricate architected polymer (P-TIMs) using high-resolution stereolithography (SLA) printing of a high-temperature resin loaded with boron nitride (BN) and glass microfibers. 3D polymer scaffolds with controlled microarchitectures including vertically oriented pillar arrays and lattice networks were printed and subsequently infiltrated with engineered thermal compounds to enhance through-plane heat conduction while maintaining electrical insulation and coefficient of thermal expansion (CTE) compatibility with semiconductor packages.
The P-TIMs were characterized for thermal, electrical, and mechanical performance. Thermal conductivity was measured using laser flash analysis and the transient plane source (TPS) method; dielectric strength and permittivity were evaluated with an LCR meter; mechanical response was assessed via tensile and compression testing; and CTE was determined by dilatometry. Device-level performance was evaluated using a chip-based test setup to quantify junction-to-case temperature reduction relative to commercial TIMs. Results demonstrate that scaffold geometry and filler composition enable repeatable control of interface thickness, compressibility, and through-plane thermal pathways, improving robustness and mitigating pump-out under thermal cycling.

Speaker: Dr Tahseen Al-wattar (Central State University)

Technical Session 3: Room C: Advanced Packaging

Technical Session 3

40 Materials development and biophotonic sensor fabrication employing lead-free halide perovskites

This study explored the development of a light source for a biophotonic sensor by integrating a lead-free halide perovskite-polymer composite thin film or dome on an inorganic UV LED source. This 3D organic/inorganic integrated device was designed to convert photons in the ultraviolet (UV, 350nm) wavelength range to 600nm light using a fluorescence process. The selected halide perovskites fluorescence material Cs4MnBi2Cl12 (CMBC) was synthesized via a precipitation method or by hydrothermal synthesis, employing commercial precursors of CsCl, MnCl₂·4H₂O, and Bi2O3 (or BiCl3). Er doped CMBC was also prepared for enhanced visible light emission. CMBC can be considered as a possible non-toxic alternative to the well-known halide perovskites containing lead (e.g. CsPbCl3). Following optical excitation at 360nm the undoped CMBC and Er: CMPC samples exhibited a broad band, orange-red emission centered at ~605nm. In addition, the Er: CMBC sample also revealed a distinct visible emission centered at ~650nm from an Er3+ intra-4f transition. For biophotonic sensor applications, prototype filters were prepared with varying concentrations of CMBC and either UV resin or cyanoacrylate adhesive in the composite film. This allowed for a comparison between filtered and unfiltered emission spectra, specifically targeting changes in transmittance at selected wavelengths.

Speaker: Demetris Geddis (Hampton University)

41 From GaN to Sapphire: How Substrate Influences MoSe2/MoS2 Heterostructure Properties

2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique properties, including layer-dependent band structures, valley-selective optical coupling, catalytic activity, large exciton binding energies, and strong nonlinear optical responses. These features make TMDs promising for next-generation optoelectronic and photonic devices. Stacking different monolayer TMDs to form van der Waals heterostructures enables precise tuning of band gaps from the visible to infrared range, enhancing optoelectronic performance. Integrating these 2D heterostructures with conventional three-dimensional semiconductors, such as GaN with a 3.4 eV band gap, further extends band gap tunability and device functionality.
This study explores MoSe₂/MoS₂ heterostructures grown on GaN substrates using chemical vapor deposition (CVD), a scalable and reliable technique for large-area synthesis. We investigate how substrate and temperature influence the optoelectronic properties of the heterostructures, including the band gap and phonon modes. In addition, we examine optical properties, such as photoluminescence and absorption, as well as structural characteristics, including interlayer coupling, layer alignment, and crystal quality. By examining the differences between MoSe₂/MoS₂ grown on GaN and sapphire substrates, this study reveals the crucial role of substrate interactions in tuning TMD heterostructures for optoelectronic applications.

Speaker: Dr M. K. Indika Senevirathna (Clark Atlanta University)

42 Experimental Investigation of 3D-Printed Polymer Lattice Composite Thermal Interface Materials for Semiconductor Packages

Polymerization enables precise control of polymer lattice architectures for thermal interface materials (P-TIMs), creating new opportunities to tailor heat transfer and mechanical compliance. This study experimentally investigates SLA-printed lattice P-TIMs as a function of unit-cell topology and composite formulation. A baseline lattice was modified by introducing vertical struts in uniform, alternating, and graded arrangements, and both open- and closed-cell configurations were designed within the Gibson–Ashby cellular solids framework.
A high-temperature photocurable resin was loaded with boron nitride (BN) microparticles and glass microfibers at varying weight fractions and printed using high-resolution stereolithography (SLA). Printed lattices were post-cured and subsequently infiltrated with thermally conductive polymer composites to enhance through-plane conduction. Through-plane thermal conductivity and thermal contact resistance were measured under controlled compressive loading, and mechanical compliance was evaluated to assess stability under representative interface pressures.
Results show that lattice configuration and filler composition jointly govern through-plane heat transfer and overall thermal resistance. Architectures that promote continuous vertical conduction pathways, combined with appropriate open/closed-cell topology, achieve improved thermal performance while maintaining compliance and mechanical stability. These findings establish additively manufactured, geometry- and composition-engineered P-TIMs as a clean, reusable, high-performance option for chip-to-heat-sink thermal management in advanced electronics cooling applications.

Speaker: Mr Camron Nesbitt (Central State University)

43 Experimental Evaluation of BNNT-based Thin Films for Mitigating Single Event Effects in SRAM via Proton Beams

Semiconductor chips in space are highly vulnerable to Single Event Effects (SEE) caused by high-energy radiation. While conventional bulk shielding is limited by mass and volume, lightweight solutions are essential for space system efficiency. This study investigates thin-film shielding materials utilizing Boron Nitride Nanotubes (BNNTs) and polymer composites. Due to their low atomic mass and high hydrogen-like atomic density, BNNTs are excellent candidates for slowing down incident protons.
We evaluated the radiation shielding performance of BNNT-Parylene C composite films using a Static Random-Access Memory (SRAM) array exposed to 100 MeV proton beam. The results demonstrated that the shielding effectiveness varied based on film thickness and proton energy. Although the reduction in radiation effects was moderate, the findings validate the potential of BNNT-based thin films as lightweight shields against high-energy protons. Future work will focus on optimizing multilayer structures combining hydrogen-rich polymers and higher-density BNNT configurations to enhance shielding performance.

Speaker: Alexander Roque (Norfolk State University)

Plenary Session: Technical Session Sprints

44 Recap and Highlights from Technical Sessions

Plenary Session: Special Announcement: HBCU CHIPS Network Initiation Committee

Closing Remarks

Closing remarks