Description
Technical Session 3
The continued scaling of microelectronic devices is fundamentally constrained by non-ideal metal–semiconductor interfaces, where Fermi-level pinning and metal-induced gap states limit Schottky barrier tunability and increase contact resistance. This work proposes an integrated research and workforce framework to advance next-generation contact engineering through atomically controlled van der...
This study explored the development of a light source for a biophotonic sensor by integrating a lead-free halide perovskite-polymer composite thin film or dome on an inorganic UV LED source. This 3D organic/inorganic integrated device was designed to convert photons in the ultraviolet (UV, 350nm) wavelength range to 600nm light using a fluorescence process. The selected halide perovskites...
High-quality, multifunctional two-dimensional (2D) titanium oxynitride (TiNO) thin films and one-dimensional (1D) TiNO nanowires have been synthesized using a pulsed laser deposition, a simple, fast, and congruent evaporation method. First-principles calculations as a function of surface orientation and termination indicate that surface oxidation of TiNO nanowires can stabilize the (110)...
2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique properties, including layer-dependent band structures, valley-selective optical coupling, catalytic activity, large exciton binding energies, and strong nonlinear optical responses. These features make TMDs promising for next-generation optoelectronic and photonic devices. Stacking different...
Scandium diboride (ScB2) is a refractory semi-metallic ultrahard ceramic crystal that is lattice matched to ultra-wide bandgap (UWBG) AlGaN. The lattice match of ScB2/Al0.55Ga0.45N would reduce the strain and crystal defects of epitaxial layers enabling thicker pseudomorphic drift layers >5um for high voltage vertical power devices >5kV on these semi-metallic substrates, while eliminating the...
The performance of Gallium Nitride (GaN) betavoltaic devices is strongly influenced by surface potential due to the shallow penetration depth of beta particles from Tritium (³H). In this work, the effects of surface potential on charge collection efficiency in a PN, GaN betavoltaic cell are modeled using a Metal–Oxide–Semiconductor (MOS)-based field-plate approach implemented in Silvaco TCAD....
Controlling spin states in quantum and magnetic materials using dynamic strain fields offers a promising route toward hybrid quantum and spintronic technologies. Surface acoustic waves (SAWs) provide a versatile mechanism for generating such strain via magnetoelastic or piezomagnetic coupling. However, conventional interdigital transducers (IDTs) are limited by narrow frequency bands. This...
Polymerization enables precise control of polymer lattice architectures for thermal interface materials (P-TIMs), creating new opportunities to tailor heat transfer and mechanical compliance. This study experimentally investigates SLA-printed lattice P-TIMs as a function of unit-cell topology and composite formulation. A baseline lattice was modified by introducing vertical struts in uniform,...
The increasing demand for high-performance energy storage devices has intensified interest in dielectric polymers for electrostatic capacitive applications due to their high-power density and compatibility with thin-film architectures. Among these materials, poly(vinylidene fluoride) (PVDF) is particularly attractive because of its high dielectric constant, low cost, mechanical flexibility,...
The CHIPS and Science Act has accelerated the need for domestic semiconductor manufacturing capabilities built on precise thin-film deposition, scalable process control, and integrated metrology. Atomic Layer Deposition (ALD), with its angstrom-level thickness control and excellent conformality, is a critical enabler for next-generation logic, memory, and interconnect technologies.
This work...
Semiconductor chips in space are highly vulnerable to Single Event Effects (SEE) caused by high-energy radiation. While conventional bulk shielding is limited by mass and volume, lightweight solutions are essential for space system efficiency. This study investigates thin-film shielding materials utilizing Boron Nitride Nanotubes (BNNTs) and polymer composites. Due to their low atomic mass and...
Power semiconductor devices generate substantial heat during operation, making thermal interface materials (TIMs) critical for maintaining performance and reliability. Conventional greases and pads, however, often suffer from poor mechanical stability, limited reusability, and inconsistent application. Here we present a scalable approach to fabricate architected polymer (P-TIMs) using...
