From Education to Innovation — Building the Future of the U.S. Semiconductor Industry

Apr 1 – 2, 2026
Renaissance Atlanta Midtown Hotel
America/New_York timezone
Championing New Approaches to Reestablishing US Dominance in Semiconductors & Microelectronics

Intrinsic Ferroelectric Switching in 2D CuInP₂S₆

Not scheduled
20m
Ball Room (Renaissance Atlanta Midtown Hotel)

Ball Room

Renaissance Atlanta Midtown Hotel

866 W Peachtree St NW, Atlanta, GA 30308
POSTER Materials & Devices - (a) Poster Session

Speaker

Dion Brumfield (Jackson State University)

Description

Two-dimensional (2D) ferroelectric materials are promising candidates for next-
generation nanoelectronic and non-volatile memory devices. Reliable
electrical characterization at the nanoscale remains challenging. In this work, we
investigate the ferroelectric properties of layered CuInP₂S₆ (CIPS) using a modified
conductive atomic force microscopy (C-AFM) approach. CIPS flakes were
mechanically exfoliated onto a conducting gold (Au) substrate, followed by the transfer
of few-layer graphene (FLG) on top, forming an Au/CIPS/FLG van der Waals
heterostructure. Au serves as the bottom electrode, FLG acts as
the top contact, and CIPS functions as the ferroelectric layer. Due to the small lateral
dimensions of the FLG electrode, a conducting AFM tip was employed to establish a
precise electrical connection to the FLG, enabling localized ferroelectric
measurements. The conducting tip was interfaced with a ferroelectric tester to probe
the electrical response of the heterostructure. Frequency-dependent polarization–
electric field (P–E) hysteresis loops were measured under various electric field
sweeps, along with current–voltage characteristics. Additionally, positive-up–negative-
down (PUND) measurements were performed to distinguish intrinsic ferroelectric
switching from non-ferroelectric contributions. The observed hysteresis behavior and
PUND response confirm the intrinsic ferroelectric nature of 2D CIPS and demonstrate
the effectiveness of the modified C-AFM technique for probing nanoscale
ferroelectricity.

Academic or Professional Status Undergraduate Student

Author

Dion Brumfield (Jackson State University)

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