Speaker
Description
Vanadium disulfide (VS2) is a 2D transition metal dichalcogenide with highly tunable electronic, magnetic, and optoelectronic properties. While bulk VS2 exhibits metallic behavior, monolayer and H-phase forms are p-type semiconductors with a direct bandgap of 0.3-1.3 eV, high structural stability, and room-temperature ferromagnetism. The metallic phase is ideal for ultrathin, low-resistance contacts in field-effect transistors, whereas semiconducting monolayers serve as active channels. Monolayer VS2 also exhibits strong light–matter interactions, enabling photodetector and phototransistor applications. Various techniques have been employed to synthesize VS2 layers, among which chemical vapor deposition (CVD) is particularly effective. CVD enables a controllable and reproducible process for producing high-quality crystalline monolayers. Furthermore, its strong compatibility with established industrial fabrication standards makes it well-suited for both fundamental research and scalable production of two-dimensional materials.
This study investigates the optoelectronic properties of VS2 synthesized via CVD on various substrates, extending beyond conventional growth approaches. Optimal growth conditions, including temperature and carrier gas flow rate, are systematically identified to achieve a high-quality, continuous VS2 monolayer. Using photoluminescence, Raman spectroscopy, and confocal laser optical microscopy, we examine surface morphology, crystalline quality, phonon modes, and band gap characteristics of the VS2 layers.
| Academic or Professional Status | Undergraduate Student |
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