Speaker
Description
Two-dimensional (2D) van der Waals heterostructures offer a powerful materials-by-design approach for beyond-CMOS electronics, enabling atomically sharp junctions, clean interfaces, and heterogeneous integration on silicon platforms. Among these, MoS₂–graphene heterostructures combine graphene’s high conductivity and tunable work function with the semiconducting bandgap of MoS₂, providing a versatile platform for low-resistance contacts, ultrathin channels, and 2D–2D junction devices relevant to future chip technologies. Here, we report the fabrication and spectroscopic verification of a MoS₂–graphene vdW heterostructure assembled on SiO₂/Si using a viscoelastic stamping technique. This approach enables deterministic placement and alignment of exfoliated 2D layers while minimizing solvent exposure and interfacial contamination, which are critical for reproducible device integration. Optical microscopy confirms successful overlap of graphene and MoS₂ flakes. Raman spectroscopy reveals the simultaneous presence of characteristic graphene G (~1576 cm⁻¹) and 2D (~2708 cm⁻¹) bands, along with MoS₂ E12g(~377 cm⁻¹) and A1g(~402 cm⁻¹) modes, confirming few-layer MoS₂ and high-quality graphene in the heterostructure. Building on these results, we will advance MoS₂–graphene 2D–2D junctions through spectroscopic mapping, interface engineering, and correlation of Raman signatures with electrical and optoelectronic performance. This platform enables scalable integration of 2D materials for chip-scale technologies, including low-power electronics, RF contacts, photodetectors, and heterogeneous integration on Silicon.
| Academic or Professional Status | Undergraduate Student |
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